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Journal of Lightwave Technology

Journal of Lightwave Technology

| A JOINT IEEE/OSA PUBLICATION

  • Vol. 28, Iss. 8 — Apr. 15, 2010
  • pp: 1184–1189

High-Power High-Responsivity Modified Uni-Traveling-Carrier Photodiode Used as V-Band Optoelectronic Mixers

Huapu Pan, Zhi Li, and Joe C. Campbell

Journal of Lightwave Technology, Vol. 28, Issue 8, pp. 1184-1189 (2010)


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Abstract

A modified uni-traveling-carrier photodiode-based V-band optoelectronic mixer is demonstrated. The relative optical local oscillator (LO) and optical intermediate frequency (IF) signal levels and the reverse bias can be optimized for maximum up-converted power. It was found that the optimum optical IF percentage relative to the total incident optical power was approximately 1/3 for all photocurrent levels while the optimum reverse bias increased linearly with photocurrent. A simple analytical model that explains these observations is developed. A high up-converted power of ${-}4.7$ dBm was achieved at 60 GHz and photocurrent of 70 mA. The maximum up-converted power is primarily limited by the saturation characteristic of the photodiode.

© 2010 IEEE

Citation
Huapu Pan, Zhi Li, and Joe C. Campbell, "High-Power High-Responsivity Modified Uni-Traveling-Carrier Photodiode Used as V-Band Optoelectronic Mixers," J. Lightwave Technol. 28, 1184-1189 (2010)
http://www.opticsinfobase.org/jlt/abstract.cfm?URI=jlt-28-8-1184


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