The authors report the formation of air voids at GaN/cone-shaped pattern sapphire substrate interface by laser scribing and lateral etching with one-step growth. With 5 and 20 min lateral etching, it was found that pyramid-like air voids were formed with an average height of 0.98 and 1.9 $\mu$m, respectively, on top of each cone of the substrate. It was also found that we can enhance LED output power by 11.5% by etching the wafers for 20 min. It was also found that the simulated results agree well with the experimentally observed data.
© 2011 IEEE
N. M. Lin, S. J. Chang, S. C. Shei, W. C. Lai, Y. Y. Yang, W. C. Lin, and H. M. Lo, "GaN-Based LEDs With Air Voids Prepared by One-Step MOCVD Growth," J. Lightwave Technol. 29, 2831-2835 (2011)