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Journal of Lightwave Technology

Journal of Lightwave Technology

| A JOINT IEEE/OSA PUBLICATION

  • Vol. 29, Iss. 18 — Sep. 15, 2011
  • pp: 2831–2835

GaN-Based LEDs With Air Voids Prepared by One-Step MOCVD Growth

N. M. Lin, S. J. Chang, S. C. Shei, W. C. Lai, Y. Y. Yang, W. C. Lin, and H. M. Lo

Journal of Lightwave Technology, Vol. 29, Issue 18, pp. 2831-2835 (2011)


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Abstract

The authors report the formation of air voids at GaN/cone-shaped pattern sapphire substrate interface by laser scribing and lateral etching with one-step growth. With 5 and 20 min lateral etching, it was found that pyramid-like air voids were formed with an average height of 0.98 and 1.9 $\mu$m, respectively, on top of each cone of the substrate. It was also found that we can enhance LED output power by 11.5% by etching the wafers for 20 min. It was also found that the simulated results agree well with the experimentally observed data.

© 2011 IEEE

Citation
N. M. Lin, S. J. Chang, S. C. Shei, W. C. Lai, Y. Y. Yang, W. C. Lin, and H. M. Lo, "GaN-Based LEDs With Air Voids Prepared by One-Step MOCVD Growth," J. Lightwave Technol. 29, 2831-2835 (2011)
http://www.opticsinfobase.org/jlt/abstract.cfm?URI=jlt-29-18-2831


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