Abstract
In this paper, the photocurrent in a CMOS compatible Si photodetector
is calculated considering the effect of diffusion of photogenerated carriers
from the substrate region. The parasitic effects due to the multiple diodes
in lateral configuration have also been considered in the analysis. Normalized
frequency response is computed for a square-area photodetector. The results
on the 3 dB bandwidth are shown as a function of number of diodes, finger
width, finger spacing, and the photodetector length. It is shown that some
optimum choices of the device parameters exist to obtain the bandwidth maxima
of the lateral Si photodetector.
© 2011 IEEE
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