Abstract
Waveguide avalanche photodiodes (WG-APDs) have been developed for a 25-Gb/s
operation. The waveguide structure was adopted for the APDs in order to achieve both
high-speed performance and high responsivity. First, the dependence of the
multiplication and absorption layer thickness on the 3-dB bandwidths of the WG-APDs was
theoretically clarified. It was found that introducing an undepleted absorption layer
was effective in improving the 3-dB bandwidth without reducing efficiency. The 3-dB
bandwidth of the fabricated WG-APD based on the calculation results was over 20 GHz up
to a multiplication factor of 7. The responsivities were 0.6 A/W for 1.31 µm and
0.75 A/W for 1.55 µm wavelength. High reliability of the WG-APDs was also
demonstrated.
© 2011 IEEE
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