Abstract
The phase response of an injection locked semiconductor laser that is
used as the phase modulator in a resonant cavity linear interferometric intensity
modulator is studied in detail. It is shown that, signal-to-intermodulation
ratio of such a modulator is affected by the injection ratio, linewidth enhancement
factor of the semiconductor laser, residual amplitude modulation, depth of
phase modulation, and linearity of the resonant cavity response. Experimental
measurements of the signal-to-intermodulation ratio of this modulator using
a semiconductor Fabry-Pérot laser as the resonant cavity are in good
agreement with the theoretically predicted values.
© 2011 IEEE
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