Abstract
We report on a simple and direct method of measuring localized chromatic
dispersion (CD) profiles of structured nanowaveguide devices using white-light
interferometry. Phase change in the interference fringe of a white-light interferometer
(WLI) caused by introducing a sample-under-test into one of the interferometer arms was
used to determine a spectral profile of its accurate CD coefficients. This method was
tested by measuring the spectral CD profiles of a localized silicon nanowaveguide and of
a nonmembrane-type photonic crystal waveguide (PhCW) excluding their optical coupling
sections. The measured local CD values of a 500-nm-wide single-line-defect (W1) PhCW
with a lattice period of 460 nm and the hole radius of 165 nm formed on 220-nm-thick
silicon layer of a silicon-on-insulator (SOI) wafer varied from 0.38 to 0.22
ps/(nm·cm) for a wavelength range from 1530 to 1570 nm. This method will be very
useful in determining the accurate CD profiles of nanophotonic waveguide
devices.
© 2011 IEEE
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