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Journal of Lightwave Technology

Journal of Lightwave Technology


  • Vol. 30, Iss. 10 — May. 15, 2012
  • pp: 1433–1436

Optical Channel Waveguide in KTiOAsO4 Crystals Produced by O+ion Implantation

Yang Jiao and Lei Wang

Journal of Lightwave Technology, Vol. 30, Issue 10, pp. 1433-1436 (2012)

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We report on the fabrication and characterization of optical channel waveguide in x-cut KTiOAsO4 crystal produced by photographic masking and following direct O+ion implantation at energy of 3.0 MeV and fluence of 5 × 1013 ions/cm2. Positive changes of both nx and ny refractive indices (corresponding TM and TE polarized light respectively) in the waveguide region are responsible for light waveguiding. After annealing treatment, the propagation losses of the waveguide could be reduced to 1.2 dB/cm, exhibiting acceptable guiding properties.

© 2011 IEEE

Yang Jiao and Lei Wang, "Optical Channel Waveguide in KTiOAsO4 Crystals Produced by O+ion Implantation," J. Lightwave Technol. 30, 1433-1436 (2012)

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