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Journal of Lightwave Technology

Journal of Lightwave Technology

| A JOINT IEEE/OSA PUBLICATION

  • Vol. 30, Iss. 14 — Jul. 15, 2012
  • pp: 2256–2261

The Influence of the Thermal Effect on CdSe/ZnS Quantum Dots in Light-Emitting Diodes

Kuo-Ju Chen, Hsin-Chu Chen, Min-Hsiung Shih, Chao-Hsun Wang, Ming-Yen Kuo, Yi-Chun Yang, Chien-Chung Lin, and Hao-Chung Kuo

Journal of Lightwave Technology, Vol. 30, Issue 14, pp. 2256-2261 (2012)


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Abstract

This study investigates the effect of temperature on CdSe/ZnS quantum dots (QDs) in GaN-based light-emitting diodes (LEDs) using the phosphor conversion efficiency (PCE) and LED junction temperature. In our simulation, the blue chip and CdSe/ZnS QDs temperature are similar because of their minimal thickness. Furthermore, to verify the effect of temperature on CdSe/ZnS QDs, we use continuous wave and pulsed current sources to measure the relationship between the temperature and relative PCE. Higher junction temperatures are observed with greater CdSe/ZnS QD volume in LEDs. This is attributed to the thermal conduction and nonradiative energy between CdSe/ZnS QDs and blue chip. Therefore, if thermal management is improved, CdSe/ZnS QDs are expected to be used as color converting material in LEDs.

© 2012 IEEE

Citation
Kuo-Ju Chen, Hsin-Chu Chen, Min-Hsiung Shih, Chao-Hsun Wang, Ming-Yen Kuo, Yi-Chun Yang, Chien-Chung Lin, and Hao-Chung Kuo, "The Influence of the Thermal Effect on CdSe/ZnS Quantum Dots in Light-Emitting Diodes," J. Lightwave Technol. 30, 2256-2261 (2012)
http://www.opticsinfobase.org/jlt/abstract.cfm?URI=jlt-30-14-2256

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