This study investigates the effect of temperature on CdSe/ZnS quantum dots (QDs) in GaN-based light-emitting diodes (LEDs) using the phosphor conversion efficiency (PCE) and LED junction temperature. In our simulation, the blue chip and CdSe/ZnS QDs temperature are similar because of their minimal thickness. Furthermore, to verify the effect of temperature on CdSe/ZnS QDs, we use continuous wave and pulsed current sources to measure the relationship between the temperature and relative PCE. Higher junction temperatures are observed with greater CdSe/ZnS QD volume in LEDs. This is attributed to the thermal conduction and nonradiative energy between CdSe/ZnS QDs and blue chip. Therefore, if thermal management is improved, CdSe/ZnS QDs are expected to be used as color converting material in LEDs.
© 2012 IEEE
Kuo-Ju Chen, Hsin-Chu Chen, Min-Hsiung Shih, Chao-Hsun Wang, Ming-Yen Kuo, Yi-Chun Yang, Chien-Chung Lin, and Hao-Chung Kuo, "The Influence of the Thermal Effect on CdSe/ZnS Quantum Dots in Light-Emitting Diodes," J. Lightwave Technol. 30, 2256-2261 (2012)