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Journal of Lightwave Technology

Journal of Lightwave Technology

| A JOINT IEEE/OSA PUBLICATION

  • Vol. 30, Iss. 18 — Sep. 15, 2012
  • pp: 3003–3009

Optical RAM and Flip-Flops Using Bit-Input Wavelength Diversity and SOA-XGM Switches

Christos Vagionas, Dimitrios Fitsios, George T. Kanellos, Nikos Pleros, and Amalia Miliou

Journal of Lightwave Technology, Vol. 30, Issue 18, pp. 3003-3009 (2012)


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Abstract

In this paper, we demonstrate a novel RAM cell based only on three traveling waveguide semiconductor optical amplifier-cross gain modulation (SOA-XGM) switches. The RAM cell features wavelength diversity in the incoming bit signals and provides Read/Write operation capability with true random access exclusively in the optical domain. Two of the SOA-XGM switches are coupled together through an 70/30 coupler to form an asynchronous flip-flop, which serves as the memory unit. Random access to the memory unit is granted by a third SOA-ON/OFF switch and all three SOAs together form the proposed RAM cell. Proof-of-principle operation is experimentally demonstrated at 8 Mb/s using commercial fiber-pigtailed components. The distinctive simplicity of the proposed RAM cell architecture suggests reduced footprint. The proposed flip-flop layout holds all the credentials for reaching multi-Gb/s operational speeds, if photonic integration technologies are employed to obtain wavelength-scale waveguides and ultrashort coupling lengths. This is numerically confirmed for 10 Gb/s using a simulation model based on the transfer matrix method and a wideband steady-state material gain coefficient.

© 2012 IEEE

Citation
Christos Vagionas, Dimitrios Fitsios, George T. Kanellos, Nikos Pleros, and Amalia Miliou, "Optical RAM and Flip-Flops Using Bit-Input Wavelength Diversity and SOA-XGM Switches," J. Lightwave Technol. 30, 3003-3009 (2012)
http://www.opticsinfobase.org/jlt/abstract.cfm?URI=jlt-30-18-3003

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