Abstract
In this paper we study high-speed pattern effect-free cross-gain modulation (XGM)
in quantum-dot vertical-cavity semiconductor optical amplifier (QD-VCSOA) with and
without considering Auger effect. XGM is examined for the different surface densities of
QDs and bias currents. We show that appearance of the pattern effect strongly depends on
the bias current and surface density of QDs. Pattern effect is improved at higher
injection current or low dot density. However, at higher currents since Auger scattering
is stronger it fills the higher state of QD and causes the drop of stimulated emission
resulting in lower modulation efficiency.
© 2012 IEEE
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