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Journal of Lightwave Technology

Journal of Lightwave Technology

| A JOINT IEEE/OSA PUBLICATION

  • Vol. 30, Iss. 23 — Dec. 1, 2012
  • pp: 3576–3579

Microwave On/Off Ratio Enhancement of GaAs Photoconductive Switches at Nanometer Scale

C. Tripon-Canseliet, S. Faci, A. Pagies, V. Magnin, S. Formont, D. Decoster, and J. Chazelas

Journal of Lightwave Technology, Vol. 30, Issue 23, pp. 3576-3579 (2012)


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Abstract

This paper reports on performances enhancement of photoconductive switches in term of On/Off ratio and insertion losses. The optimization parameters on which the research has been focused are gap dimensions reduction to nanometer scale. The device characterization results up to a microwave frequency of 40 GHz and under CW illumination at a wavelength of 800 nm are presented. On/Off ratio reveals a value of 13 dB at 20 GHz under 100 mW optical power.

© 2012 IEEE

Citation
C. Tripon-Canseliet, S. Faci, A. Pagies, V. Magnin, S. Formont, D. Decoster, and J. Chazelas, "Microwave On/Off Ratio Enhancement of GaAs Photoconductive Switches at Nanometer Scale," J. Lightwave Technol. 30, 3576-3579 (2012)
http://www.opticsinfobase.org/jlt/abstract.cfm?URI=jlt-30-23-3576

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