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Journal of Lightwave Technology

Journal of Lightwave Technology


  • Vol. 31, Iss. 13 — Jul. 1, 2013
  • pp: 2279–2283

Facet Passivation of GaAs Based LDs by N2 Plasma Pretreatment and RF Sputtered AlxNy Film Coating

Lu Zhou, Xin Gao, Yunhua Wang, Liuyang Xu, Baoshan Jia, Duanyuan Bai, and Baoxue Bo

Journal of Lightwave Technology, Vol. 31, Issue 13, pp. 2279-2283 (2013)

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RF sputtered AlxNy thin film is deposited on the cavity surface of LD (laser diode) by N2 plasma pretreatment. Firstly optimize the preparation process of AlxNy film, and test the chemical ratio, reflectivity and optical absorption of the optimized AlxNy film by EDX, spectrophotometer and surface thermal lens technology respectively, which verify the feasibility of AlxNy used for facet coating film in LD process; then optimize the N2 plasma cleaning process, and use PL to find out that sputtered AlxNy passivation film by N2 plasma pretreatment can increase the GaAs surface photoluminescence efficiency by 119%. Finally, a 10 nm thick AlxNy passivation film is coated on cavity surface of LD with optimized N2 plasma pretreatment, which leads to a higher reliability than the traditional LD.

© 2013 IEEE

Lu Zhou, Xin Gao, Yunhua Wang, Liuyang Xu, Baoshan Jia, Duanyuan Bai, and Baoxue Bo, "Facet Passivation of GaAs Based LDs by N2 Plasma Pretreatment and RF Sputtered AlxNy Film Coating," J. Lightwave Technol. 31, 2279-2283 (2013)

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