Abstract
We analyze the influence of the fabrication technique
and the silicon excess on the power efficiency and evolution with time of
the electroluminescence of silicon rich silicon oxide in metal—oxide—semiconductor
like light emitting capacitors under direct current. The silicon rich silicon
oxide layers have been fabricated using two different techniques, namely plasma
enhanced chemical vapor deposition and silicon ion implantation. Six different
silicon excesses have been studied, ranging from 6 at. % to 15 at. %. It is
shown that both the power efficiency and external quantum efficiency increase
with the silicon excess due to a decrease in the electroluminescence current
threshold. The maximum value of the power efficiency has been found to be
$(2.6\pm 0.3)\times 10^{-5}$
in the ion implanted sample with 15 at. %
silicon excess. Significant differences in the evolution of the electroluminescence
with time are found depending on the fabrication technique.
© 2013 IEEE
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