Abstract
Plasmonic waveguides based on surface plasmon polartions (SPPs) are highly complementary
metal–oxide–semiconductor (CMOS)-compatible that they have been considered as a prospective basic element
to implement future on-chip subwavelength electronic–photonic integrated circuits (EPICs). We propose the
monolithic integration of CMOS-compatible plasmonic waveguides within CMOS architecture for the development of CMOS
EPICs. Based on a preformed CMOS optoelectronic platform, several different types of plasmonic EPIC schematics are
proposed. The vertical directional coupling characteristics of the proposed plasmonic EPICs are thoroughly
investigated in detail at a telecom wavelength of 1.55 μm. By changing the geometrical parameters of the
plasmonic waveguides, we identified the coupler configuration that provides optimal optical performance. We discussed
the design and fabrication issues for further development of the proposed plasmonic CMOS EPICs and related
microsystems. We concluded that the proposed monolithic integration platform would make first step forward to
exploiting for plasmonic-based 3-D on-chip EPICs.
© 2013 IEEE
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