Abstract
Integrated planar photonic crystal circuits in silicon on insulator were
fabricated with a single-etch-step process by a foundry using complementary
metal-oxide-semiconductor processing techniques. The devices studied integrate three key
elements: i) input/output grating couplers consisting of 2D uniform arrays of holes, ii)
single transverse electric (TE)/single transverse magnetic (TM) mode channel waveguides,
and iii) a photonic crystal linear three hole defect (L3) microcavity. Experimentally
measured s- and p-polarized transmission, both from grating-to-grating through a uniform
silicon slab region, and through the channel waveguide/L3 cavity circuit, were
quantitatively compared with finite-difference time-domain simulations. Excellent
agreement is achieved assuming circular, vertical side-wall holes, but this requires
accurate post-fabrication characterization of actual versus nominal device parameters,
including especially the silicon device layer thickness. While s-polarized incident
radiation excites TE modes that exhibit typical resonant cavity (filter-like)
transmission, p-polarized incident radiation excites TM modes that non-resonantly
propagate through the circuit with comparable transmission efficiency. The dependence of
the grating coupler tuning range on hole diameter, and the addition of a photoresist
covering is determined.
© 2012 IEEE
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