Abstract
We demonstrate a novel InP-based photodiode structure with large active diameter (55 μm) for
> 25 Gbit/s operation at optical wavelengths which range from 0.85 to 1.55 μm. By utilizing the large
absorption constant (>3 μm
$^{-1}$
) of In
$_{0.53}$
Ga
$_{0.47}$
As-based p-type absorption layer at 0.85 μm wavelength excitation, the slow hole transport can be
eliminated in our structure and the tradeoff between RC-limited bandwidth
and carrier transient time can be greatly released due to the excellent characteristics of electron transport in the
intrinsic and thick In
$_{0.53}$
Ga
$_{0.47}$
As layer (∼4 μm). Furthermore, in order to minimize the serious surface
(absorption) recombination in the top p-type In
$_{0.53}$
Ga
$_{0.47}$
As absorption layer, an additional p-type In
$_{0.52}$
Al
$_{x}$
Ga
$_{0.48{-}x}$
As-graded bandgap layer (GBL) is grown above it.
Such a GBL cannot only provide uniform photoabsorption profile, but also accelerates the electron diffusion process.
Under –1
${\rm V}$
bias, these devices can achieve high-speed
(14 and 22 GHz), and high responsivity (0.25 and 0.9 A/W), at 0.85 and 1.55 μm wavelength operation,
respectively. Clear eye-opening (error-free) with data rate up to around 30 Gbit/s have also been demonstrated at both
wavelengths.
© 2013 IEEE
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