OSA's Digital Library

Journal of Lightwave Technology

Journal of Lightwave Technology

| A JOINT IEEE/OSA PUBLICATION

  • Vol. 31, Iss. 6 — Mar. 15, 2013
  • pp: 936–941

Design and Analysis for a 850 nm Si Photodiode Using the Body Bias Technique for Low-voltage Operation

Fang-Ping Chou, Guan-Yu Chen, Ching-Wen Wang, Zi-Ying Li, Yu-Chang Liu, Wei-Kuo Huang, and Yue-Ming Hsin

Journal of Lightwave Technology, Vol. 31, Issue 6, pp. 936-941 (2013)


View Full Text Article

Acrobat PDF (1395 KB)





Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations
  • Export Citation/Save Click for help

Abstract

This study presents a design of the body contact in an 850 nm Si photodiode (PD) fabricated using standard 0.18-µm CMOS technology, and presents a systematic investigation of its effects on PD performance. This study confirms a good PD performance within 3 V bias and the establishment of the body current by directly measuring the body current, PD capacitance, and photocurrents. The body current from the biasing body contact was designed to eliminate the slow diffusion photocarriers in the substrate and increase bandwidth. The highest responsivity of 1.2 A/W was obtained from the PD without the body current, with biasing in the avalanche region. Adding the body bias increased the optimal bandwidth from 2.51 to 3.11 GHz, but reduced responsivity. However, the operating bias of the Si PD in the avalanche region was high, making it unsuitable for practical applications. While biasing PD at a low 3 V with a coordinated body bias, a bandwidth of 2.46 GHz was obtained with an acceptable responsivity of 0.1 A/W to allow low-voltage operation.

© 2013 IEEE

Citation
Fang-Ping Chou, Guan-Yu Chen, Ching-Wen Wang, Zi-Ying Li, Yu-Chang Liu, Wei-Kuo Huang, and Yue-Ming Hsin, "Design and Analysis for a 850 nm Si Photodiode Using the Body Bias Technique for Low-voltage Operation," J. Lightwave Technol. 31, 936-941 (2013)
http://www.opticsinfobase.org/jlt/abstract.cfm?URI=jlt-31-6-936


Sort:  Year  |  Journal  |  Reset

References

  1. B. Yang, J. D. Schaub, S. M. Csutak, D. L. Rogers, J. C. Campbell, "10-Gb/s all-silicon optical receiver," IEEE Photon. Technol. Lett 15, 745-747 (2003).
  2. W. Z. Chen, Y. L. Cheng, D. S. Lin, "A 1.8-V 10-Gb/s fully integrated CMOS optical receiver analog front-end," IEEE J. Solid-State Circuits 40, 1388-1396 (2005).
  3. C. Rooman, D. Coppee, M. Kuijk, "Asynchronous 250 Mb/s optical receivers with integrated detector in standard cmos technology," IEEE J. Solid State Circuits 35, 953-958 (2000).
  4. W.-Z. Chen, S. H. Huang, G. W. Wu, C.-C. Liu, Y.-T. Huang, "A 3.125 Gbps CMOS fully integrated optical receiver with adaptive analog equalizer," Proc. IEEE Asian Solid-State Circuits Conf. (A-SSCC) (2007) pp. 396-399.
  5. M.-J. Lee, W.-Y. Choi, "A silicon avalanche photodetector fabricated with standard CMOS technology with over 1 THz gain-bandwidth product," Opt. Exp. 18, 24189-24194 (2010).
  6. W.-Z. Chen, S.-H. Huang, "A2.5 Gbps CMOS fully integrated optical receiver with lateral PIN detector," Proc. Custom Integrated Circuits Conf. (CICC) (2077) pp. 293-296.
  7. B. Ciftcioglu, L. Zhang, J. Zhang, J. R. Marciante, J. Zuegel, R. Sobolewski, H. Wu, "Integrated silicon PIN photodiodes using deep N-well in a standard 0.18- µm CMOS technology," J. Lightw. Technol. 3303-3313 (2009).
  8. K. Iiyama, H. Takamatsu, T. Maruyama, "Hole-injection-type and electron-injection-type silicon avalanche photodiodes fabricated by standard 0.18- µm CMOS process," IEEE Photon. Technol. Lett. 22, 932-934 (2010).
  9. S. M. Csutak, J. D. Schaub, W. E. Wu, R. Shimer, J. C. Campbell, "CMOS-compatible high-speed planar silicon photodiodes fabricated on SOI substrates," IEEE J. Quantum Electron. 38, 193-196 (2002).
  10. C. L. Schow, R. Li, J. D. Schaub, J. C. Campbell, "Design and implementation of high-speed planar Si photodiodes fabricated on SOI substrates," IEEE J. Quantum Electron. 35, 1478-1482 (1999).
  11. W. K. Huang, Y. C. Liu, Y. M. Hsin, "Bandwidth enhancement in Si photodiode by eliminating slow diffusion photocarriers," Electron. Lett. 44, 52-53 (2008).
  12. F. Tavernier, M. Steyaert, "A 5.5 Gbit/s optical receiver in 130 nm CMOS with speed-enhanced integrated photodiode," Proc. ESSCIRC (2010) pp. 542-545.
  13. S.-H. Huang, W.-Z. Chen, Y.-W. Chang, Y.-T. Huang, "A 10-Gb/s OEIC with meshed spatially-modulated photo detector in 0.18- µm CMOS technology," IEEE J. Solid-State Circuits 46, 1158-1169 (2011).
  14. J.-S. Youn, H.-S. Kang, M.-J. Lee, K.-Y. Park, W.-Y. Choi, "High-speed CMOS integrated optical receiver with an avalanche photodetector," IEEE Photon. Technol. Lett. 21, 1553-1555 (2009).
  15. K. Iiyama, N. Sannou, H. Takamatsu, "Avalanche amplification in silicon lateral photodiode fabricated by standard 0.18 µm CMOS process," IEICE Trans. Electron. E91-C, 1820-1823 (2008).
  16. K. Iiyama, H. Takamatsu, T. Maruyama, "Silicon lateral avalanche photodiodes fabricated by standard 0.18 µm complementary metal-oxide-semiconductor process," Proc. Int. Conf. Solid State Devices Mater. (SSDM 2009) pp. 510-511.
  17. H. S. Kang, M. J. Lee, W. Y. Choi, "Si avalanche photodetectors fabricated in standard complementary metal oxide-semiconductor process," Appl. Phys. Lett. 90, 151118.1-151118.3 (2007).
  18. W. K. Huang, Y. C. Liu, Y. M. Hsin, "A high-speed and high-responsivity photodiode in standard CMOS technology," IEEE Photon. Technol. Lett. 19, 197-199 (2007).
  19. F.-P. Chou, G.-Y. Chen, C.-W. Wang, Y.-C. Liu, W.-K. Huang, Y.-M. Hsin, "Silicon photodiodes in standard CMOS technology," IEEE J. Sel. Topics Quantum Electron. 17, 730-740 (2011).

Cited By

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.

« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited