Abstract
A 25-Gbit/s avalanche photodiode (APD) using an inverted p-down structure and triple-mesa structure for
eliminating an edge breakdown and reducing an electric field at a surface of the device is proposed and examined.
Active area dependence of dark current and activation energy as small as 0.17 eV strongly suggest that the
surface leakage current is negligible, and the edge breakdown does not occur. As for RF characteristics, sufficient
3-dB bandwidth of 18 GHz for 25-Gbit/s operation is obtained. We experimentally find that our triple-mesa
inverted structure successfully eliminates the possible components which affect the reliability and stability of the
APDs.
© 2014 IEEE
PDF Article
More Like This
High-performance InGaAs/InAlAs single-photon avalanche diode with a triple-mesa structure for near-infrared photon detection
Jishen Zhang, Haibo Wang, Gong Zhang, Kian Hua Tan, Satrio Wicaksono, Haiwen Xu, Chao Wang, Yue Chen, Yan Liang, Charles Ci Wen Lim, Soon-Fatt Yoon, and Xiao Gong
Opt. Lett. 46(11) 2670-2673 (2021)
Cited By
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription