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Journal of the Optical Society of America

Journal of the Optical Society of America

  • Vol. 58, Iss. 9 — Sep. 1, 1968
  • pp: 1230–1232

Influence of Impurities on the Optical Absorption Edge of Gallium Arsenide from 297° to 4°K

JACQUES LEFEVRE, DANIEL BOIS, PIERRE PINARD, FRANÇOIS DAVOINE, and PIERRE LECLERC  »View Author Affiliations


JOSA, Vol. 58, Issue 9, pp. 1230-1232 (1968)
http://dx.doi.org/10.1364/JOSA.58.001230


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Abstract

To determine accurately the absorption coefficient of GaAs <i>n</i>-doped crystals, we developed an apparatus which permits simultaneous measurement of the coefficients of absorption <i>K</i> and reflection <i>R</i><sub>12</sub> of samples. We have determined with high precision that the absorption edge is exponential, and thus brought to light that not only the concentration of the nt impurities, but also their nature changes the slope of the curve log <i>K</i> plotted as a function of the energy. We attribute this to stresses produced in the lattice by impurity atoms. Finally, we note that the reflection coefficients vary greatly from one sample to another.

Citation
JACQUES LEFEVRE, DANIEL BOIS, PIERRE PINARD, FRANÇOIS DAVOINE, and PIERRE LECLERC, "Influence of Impurities on the Optical Absorption Edge of Gallium Arsenide from 297° to 4°K," J. Opt. Soc. Am. 58, 1230-1232 (1968)
http://www.opticsinfobase.org/josa/abstract.cfm?URI=josa-58-9-1230


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References

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