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Journal of the Optical Society of America

Journal of the Optical Society of America

  • Vol. 52, Iss. 11 — Nov. 1, 1962
  • pp: 1237–1244

Fast High-Sensitivity Silicon Photodiodes

R. L. WILLIAMS  »View Author Affiliations


JOSA, Vol. 52, Issue 11, pp. 1237-1244 (1962)
http://dx.doi.org/10.1364/JOSA.52.001237


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Abstract

A photodiode made on high-resistivity silicon (greater than 100 Ω-cm) is characterized by a relatively wide junction-depletion layer. As a consequence, for most of the spectral response region the optical generation of charge carriers occurs within the depletion layer and the separation and collection of charge is primarily controlled by electric field rather than by diffusion. Short collection times thus obtained are estimated to be in the range from 10 to 100 nsec and have been shown to be 200 nsec or less. By choice of sufficiently high resistivity and moderate reverse biases the device capacitance can be kept smaller than circuit stray capacitances.

Low values of saturation current have been obtained resulting in high diode sensitivities. Best measured noise-equivalent-power values of 2×10-13 W at 0.9 µ are about a factor 2 short of theoretical values.

Citation
R. L. WILLIAMS, "Fast High-Sensitivity Silicon Photodiodes," J. Opt. Soc. Am. 52, 1237-1244 (1962)
http://www.opticsinfobase.org/josa/abstract.cfm?URI=josa-52-11-1237


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References

  1. J. Loferski and J. J. Wysocki, RCA Rev. 22, 38–56 (1961).
  2. E. S. Rittner, "Electron Processes in Photoconductors," Photoconductivity Conference, edited by R. G. Breckenridge (John Wiley & Sons, Inc., New York, 1956), p. 245.
  3. R. L. Williams and P. P. Webb, RCA Rev. 23, 29–46 (1962).
  4. A. Van der Zeil, Noise in Electron Devices, edited by L. D.Smullin and H. A. Haus (Technology Press, Massachusetts Institute of Technology, Cambridge, Massachusetts, and John Wiley & Sons, Inc., New York, 1959), Chap. 6.
  5. W. C. Dash and R. Newman, Phys. Rev. 99, 1151–1155 (1955).
  6. H. R. Phillip and E. A. Taft, Phys. Rev. 120, 37–38 (1960).
  7. W. W. Gärtner, Phys. Rev. 116, 84 (1956).
  8. P. P. Webb, R. L. Williams, and R. W. Jackson, "An Encapsulated Silicon Junction Alpha Particle Detector," IRE Trans. on Nuclear Sci. NS-7, 199 (1960).

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