A computer-assisted, ellipsometric system performs in situ measurements on substrates and thin films in various atmospheres, at temperatures up to 1450 K. A laser is used as the light source. The light flux exiting from a rotating analyzer is measured at 512 equally spaced intervals, to yield a flux ellipse that is used for further analysis. Data acquisition and data reduction are under control of an IBM System/7 computer. Ab initio calibration of the optical components using a fixed angle of incidence is possible; the cell windows are considered as small-retardation wave plates. Effects of non-ideality of polarizer and analyzer were negligible. Refractive indices of silicon (nSI*) and thermally grown silicon dioxide (nSiO2) are reported as functions of temperature up to 1350 K.
Y. J. van der Meulen and N. C. Hien, "Design and operation of an automated, high-temperature ellipsometer," J. Opt. Soc. Am. 64, 804-811 (1974)