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Journal of the Optical Society of America

Journal of the Optical Society of America

  • Vol. 65, Iss. 1 — Jan. 1, 1975
  • pp: 46–55

Index-profile determination of heterostructure GaAs planar waveguides from mode-angle measurements at 10.6 µm wavelength

W. W. Rigrod, J. H. McFee, M. A. Pollack, and R. A. Logan  »View Author Affiliations

JOSA, Vol. 65, Issue 1, pp. 46-55 (1975)

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Heterostructure GaAs-AlxGa1-xAs-GaAs waveguides for 10.6 µm wavelength grown by liquid-phase epitaxy have a linear variation of dielectric constant in their substrates. On the basis of their mode equation, a computer program was devised for obtaining optimum values of the six parameters that define the index profiles, given a sufficient number and distribution of mode-angle measurements. The optimized parameters agreed well with the measured values for a variety of waveguides, illustrating the generality of the parameter-optimization procedure. Two types of leaky modes were observed, whose effective index β/k is less than the seed index, (1) Lummer—Gehrcke modes that are incompletely reflected at the substrate-seed interface and (2) low-loss totally reflected modes whose evanescent fields radiate into high-index seeds.

W. W. Rigrod, J. H. McFee, M. A. Pollack, and R. A. Logan, "Index-profile determination of heterostructure GaAs planar waveguides from mode-angle measurements at 10.6 µm wavelength," J. Opt. Soc. Am. 65, 46-55 (1975)

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