The beam-foil technique has been used to measure radiative lifetimes for the upper states of the transitions 3<i>s</i>3<i>p</i><sup>3</sup><i>P</i><sup>0</sup>-3<i>s</i>4<i>s</i><sup>3</sup><i>S</i> in Si III (996 Å), 3<i>s</i>3<i>d</i><sup>3</sup><i>D</i>-3<i>s</i>4ƒ<sup>3</sup><i>F</i><sup>0</sup> in SV (568 Å), and 3<i>d</i><sup>2</sup><i>D</i>-4ƒ <sup>2</sup><i>F</i><sup>0</sup> in Si IV (1067 Å) and SVI (465 Å). Absorption oscillator strengths derived from the lifetime values are compared with theoretical and experimental results for analogous transitions in atomic systems of the NaI and MgI isoelectronic sequences. Discrepancies between experiment and theory have been reduced for the Si III, Si IV, and SVI transitions. The SV result reflects effects of configuration interaction in magnesiumlike systems.
© 1976 Optical Society of America
A. E. Livingston, Y. Baudinet-Robinet, H. P. Garnir, and P. D. Dumont, "Radiative-lifetime measurements for Si III 3s4s 3S, Sv 3s4ƒ 3F0, and Si IV and S VI 4ƒ 2F0," J. Opt. Soc. Am. 66, 1393-1395 (1976)