Abstract

Cyclotron resonance (CR) experiments with submillimeter lasers have recently been extended to the megagauss (100 T) range. After a brief discussion of the possible origin of structure in CR data, the use of far-infrared spectroscopy in the investigation of the properties of semiconductor surfaces is reviewed. Both cyclotron resonance and inter-subband transitions have been studied. Finally, the strip-line technique which allows the observation of CR in semiconductors with high carrier concentration is discussed.

© 1977 Optical Society of America

Line shape cyclotron resonance in n -type germanium at 337 μm in the temperature range 15–80 K

F. Kuchar
J. Opt. Soc. Am. 67(7) 935-938 (1977)

Submillimeter cyclotron resonance of electrons in accumulation layers on indium antimonide surfaces

Michael von Ortenberg and Ursula Steigenberger
J. Opt. Soc. Am. 67(7) 928-931 (1977)

Application of terahertz quantum-cascade lasers to semiconductor cyclotron resonance

Diane C. Larrabee, Giti A. Khodaparast, Frank K. Tittel, Jun Kono, Giacomo Scalari, Lassaad Ajili, Jerome Faist, Harvey Beere, Giles Davies, Edmund Linfield, David Ritchie, Yoji Nakajima, Masato Nakai, Shigehiko Sasa, Masataka Inoue, Seokjae Chung, and Michael B. Santos
Opt. Lett. 29(1) 122-124 (2004)

A high-precision study of excited-state transitions of shallow donors in semiconductors

M. S. Skolnick, A. C. Carter, Y. Couder, and R. A. Stradling
J. Opt. Soc. Am. 67(7) 947-951 (1977)

Far-infrared studies in epitaxial films of III–V and IV–VI semiconductors*

P. M. Amirtharaj, B. L. Bean, and S. Perkowitz
J. Opt. Soc. Am. 67(7) 939-942 (1977)