Abstract

We report the submillimeter-laser-magnetptransmission of pure n-type InSb in a metal-insulator-semiconductor arrangement as a function of the applied gate voltage. From the recorded data we derive a strong dependence of the surface cylotron mass in accumulation layers on InSb on the electric field and hence on the surface density of electrons.

© 1977 Optical Society of America

Semiconductor cyclotron resonance: Transport and surface phenomena

G. Landwehr
J. Opt. Soc. Am. 67(7) 922-928 (1977)

Indium Antimonide Submillimeter Photoconductive Detectors

E. H. Putley
Appl. Opt. 4(6) 649-657 (1965)

Line shape cyclotron resonance in n -type germanium at 337 μm in the temperature range 15–80 K

F. Kuchar
J. Opt. Soc. Am. 67(7) 935-938 (1977)

Stannic oxide, a new FIR detector material?

Michael von Ortenberg, Josef Link, and Reinhard Helbig
J. Opt. Soc. Am. 67(7) 968-971 (1977)

Submillimeter spectroscopy of TO-phonon mode softening in PbTe

H. Burkhard, G. Bauer, and A. Lopez-Otero
J. Opt. Soc. Am. 67(7) 943-946 (1977)