Abstract

Ellipsometry on a series of Co–Si interfaces, for which the equivalent polycrystalline Co deposits differ by only a few monolayers, shows that a large decrease in refractive index of the glassy surface layer occurs quite sharply at Co deposits slightly less than the amount necessary to effect the semiconductor–metal transition observed with dc temperature coefficient-of-resistance measurements at 100 K. This observed behavior of the optical constants of the glassy layer can be interpreted by using a simple model for the optical-frequency polarizability of a localized electron state with a phenomenological localization parameter, which decreases with increasing Co deposit.

© 1981 Optical Society of America

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