Abstract

Phase conjugation on the surface of narrow-band (ħω > E_g) semiconductors was investigated both theoretically and experimentally. The mechanism of reflecting grating recording is plasma reflection. Experiments were carried out on the surfaces of Ge, GaAs, InSb, and Si samples. Energetic efficiency of conjugation attained 7%; the quality of conjugation was greater than 85%. Theoretical and experimental results proved to be in a good agreement. However, the description of the hologram-recording process in terms of thermal effects could not be regarded as satisfactory because it does not explain the threshold behavior of the process and does not obey quantitative comparison with experimental results.

© 1984 Optical Society of America

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