Reflectance difference spectroscopy (RDS) has been used to determine piezo-optical coefficients of semiconductors above the fundamental gap. The high sensitivity of the RDS technique allows the determination of these coefficients with the use of very small uniaxial stresses (<0.05 GPa). By measurement of RDS on samples of cubic crystals under uniaxial stress along the [001] and [111] crystal directions, the piezo-optical coefficients P₁₁−P₁₂ and P₄₄, respectively, were determined. Measurements on InP give results in good agreement with previously reported values obtained by ellipsometry. RDS was used successfully to determine the spectral dependence of P₁₁−P₁₂ in ZnSe, a II–VI semiconductor too brittle to support the stresses required for ellipsometric measurements. RDS is less sensitive than ellipsometry to the presence of surface overlayers.

© 1999 Optical Society of America

[Optical Society of America ]

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