We analyze theoretically the feasibility of what we believe to be a novel two-dimensional SiGe/Si strained-layer waveguide. The new geometry can be grown by selective epitaxy and has loosened cutoff and critical-thickness restrictions. This geometry could be applied for waveguide-active devices such as LED’s, photodetectors, and modulators. Owing to the high cross section of the guided mode, these devices could be easily interfaced in practice with optical fibers.
© 1999 Optical Society of America
Original Manuscript: July 13, 1998
Manuscript Accepted: October 28, 1998
Published: March 1, 1999
S. P. Pogossian, L. Vescan, and A. Vonsovici, "Analysis of high-confinement SiGe/Si waveguides for silicon-based optoelectronics," J. Opt. Soc. Am. A 16, 591-595 (1999)