OSA's Digital Library

Journal of the Optical Society of America A

Journal of the Optical Society of America A

| OPTICS, IMAGE SCIENCE, AND VISION

  • Vol. 18, Iss. 10 — Oct. 1, 2001
  • pp: 2577–2584

Energy transfer at optical frequencies to silicon-based waveguiding structures

Brian J. Soller and Dennis G. Hall  »View Author Affiliations


JOSA A, Vol. 18, Issue 10, pp. 2577-2584 (2001)
http://dx.doi.org/10.1364/JOSAA.18.002577


View Full Text Article

Acrobat PDF (428 KB)





Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations

Abstract

For decades, crystalline silicon (Si) has been the semiconductor of choice for the majority of applications in microelectronics. Recent advances in material science have focused attention on the silicon-on-insulator (SOI) platform, a submicrometer-thick layer of single crystal Si resting on an insulating silicon dioxide (SiO2) layer. Here we calculate the lifetime of an electric dipole moment oscillating in the cover region of several canonical Si waveguiding structures. We show that the vicinity just above SOI produces the most dramatic changes to the radiative lifetime and thus the power spectrum of the emitting dipole. We demonstrate that SOI stands apart from other Si-based optoelectronic platforms in its ability to transport energy, in the form of light, away from an oscillating electric dipole via highly localized, optical- and IR-frequency guided waves.

© 2001 Optical Society of America

OCIS Codes
(130.2790) Integrated optics : Guided waves
(130.5990) Integrated optics : Semiconductors
(290.5850) Scattering : Scattering, particles

Citation
Brian J. Soller and Dennis G. Hall, "Energy transfer at optical frequencies to silicon-based waveguiding structures," J. Opt. Soc. Am. A 18, 2577-2584 (2001)
http://www.opticsinfobase.org/josaa/abstract.cfm?URI=josaa-18-10-2577


Sort:  Author  |  Year  |  Journal  |  Reset

References

  1. L. Geppert, “Solid state semiconductors. 1999 technology analysis and forecast,” IEEE Spectrum 1, 52–56 (1999).
  2. See, for example, the spatial issue on Silicon-on-Insulator Technology (seven papers) of MRS Bull. 23, 13–40 (1998).
  3. K. D. Hobart, F. J. Kub, G. G. Jernigan, M. E. Twigg, and P. E. Thompson, “Fabrication of SOI substrates with ultra-thin Si layers,” Electron. Lett. 32, 1265–1267 (1998).
  4. L. Peters, “SOI takes over where silicon leaves off,” Semicond. Int. 16, 48–51 (1993).
  5. T. G. Brown and A. E. Bieber, “Coupling, switching, and modulation in silicon-based optoelectronic structures,” in Silicon-Based Monolithic and Hybrid Optoelectronic Devices, D. C. Houghton and B. Jalali, eds., Proc. SPIE 3007, 12–21 (1997).
  6. J. Y. L. Ho and K. S. Wong, “High-speed and high-sensitivity silicon-on-insulator metal-semiconductor-metal photodetector with trench structure,” Appl. Phys. Lett. 69, 16–19 (1996).
  7. C. L. Schow, R. Li, J. D. Schaub, and J. C. Campbell, “Design and implementation of high-speed planar Si photodiodes fabricated on SOI substrates,” IEEE J. Quantum Electron. 35, 1478–1482 (1999).
  8. M. Y. Liu, E. Chen, and S. Y. Chou, “140-GHz metal-semiconductor-metal photodetectors on silicon-on-insulator substrate with a scaled active layer,” Appl. Phys. Lett. 65, 887–888 (1994).
  9. H. R. Stuart and D. G. Hall, “Absorption enhancement in silicon-on-insulator waveguides using metal island films,” Appl. Phys. Lett. 69, 2327–2329 (1996).
  10. B. J. Soller and D. G. Hall, manuscript available from the authors.
  11. See for example, M. Moskovits, “Surface-enhanced spectroscopy,” Rev. Mod. Phys. 57, 783–826 (1985).
  12. K. H. Drexhage, “Interaction of light with monomolecular dye layers,” in Progress in Optics, E. Wolf, ed. (North–Holland, Amsterdam, 1974), Vol. 12, pp. 163–232.
  13. W. H. Weber and C. F. Eagen, “Energy transfer from an excited dye molecule to the surface plasmons of an adjacent metal,” Opt. Lett. 4, 236–238 (1979).
  14. R. R. Chance, A. Prock, and R. Silbey, “Molecular fluorescence and energy transfer near interfaces,” in Advances in Chemical Physics, I. Prigogine and S. A. Rice, eds. (Wiley, New York, 1978), Vol. 37, pp. 1–65.
  15. See, for example, W. K. H. Panofsky and M. Phillips, Classical Electricity and Magnetism (Addison–Wesley, Reading, Mass., 1956), Chap. 20 and Eqs. (21)–(23).
  16. See, for example, O. Svelto, Principles of Lasers, 2nd ed. (Plenum, New York, 1982), Chap. 2.
  17. K. G. Sullivan and D. G. Hall, “Enhancement and inhibi-tion of electromagnetic radiation in plane-layered media. I. Plane-wave spectrum approach to modeling classical effects,” J. Opt. Soc. Am. B 14, 1149–1159 (1997).
  18. G. W. Ford and W. H. Weber, “Electromagnetic interactions of molecules with metal surfaces,” Phys. Rep. 113, 195–287 (1984).
  19. We take the quantum yield to be unity because we are interested in radiation effects. This implies that our forthcoming definition of efficiency is with respect to the total amount of light radiated (or reradiated in the case of scatterers) and not the total amount of energy available in the excited state.
  20. W. C. Chew, Waves and Fields in Inhomogeneous Media (Van Nostrand Reinhold, New York, 1990).
  21. Handbook of Optical Constants of Solids, E. D. Palik, ed. (Academic, San Diego, Calif., 1985, 1991), Vols. I and II.
  22. See, for example, R. Soref, “Applications of silicon-based optoelectronics,” MRS Bull. 23, 20–24 (1998), and references therein.
  23. See, for example, D. G. Hall, “Survey of silicon-based integrated optics,” IEEE Comput. Mag. 20, 25–32 (1987), and references therein.
  24. C. F. Bohren and D. R. Huffman, Absorption and Scattering of Light by Small Particles (Wiley, New York, 1983).
  25. W. R. Holland and D. G. Hall, “Waveguide mode enhancement of molecular fluorescence,” Opt. Lett. 10, 414–416 (1985).
  26. K. G. Sullivan and D. G. Hall, “Enhancement and inhibition of electromagnetic radiation in plane-layered media. II. Enhanced fluorescence in optical waveguide sensors,” J. Opt. Soc. Am. B 14, 1160–1166 (1997).
  27. A. Sommerfeld, Partial Differential Equations in Physics (Academic, New York, 1949).

Cited By

Alert me when this paper is cited

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.


« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited