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Journal of the Optical Society of America A

Journal of the Optical Society of America A


  • Vol. 2, Iss. 5 — May. 1, 1985
  • pp: 723–726

Multiple-angle ellipsometry of Si–SiO2 polycrystalline Si system

Y. Gaillyová, E. Schmidt, and J. Humlíček  »View Author Affiliations

JOSA A, Vol. 2, Issue 5, pp. 723-726 (1985)

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The multiple-angle-of-incidence ellipsometric study of polycrystalline Si deposited on oxidized single-crystal Si is presented. The complex index of refraction of polycrystalline Si, 3.936 + i.040 at 632.8 nm, and the film thicknesses are obtained with high precision for the optimum thicknesses of a SiO2 layer predicted numerically.

© 1985 Optical Society of America

Original Manuscript: July 26, 1984
Manuscript Accepted: December 13, 1984
Published: May 1, 1985

Y. Gaillyová, E. Schmidt, and J. Humlíček, "Multiple-angle ellipsometry of Si–SiO2 polycrystalline Si system," J. Opt. Soc. Am. A 2, 723-726 (1985)

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  1. E. A. Irene, D. W. Dong, “Ellipsometry measurements of poly-crystalline silicon films,”J. Electrochem. Soc. 129, 1347–1353 (1982). [CrossRef]
  2. R. M. A. Azzam, N. M. Bashara, Ellipsometry and Polarized Light (North-Holland, Amsterdam, 1977).
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  6. J. Humlíček, “Evaluation of derivatives of reflectance and transmittance by stratified structures and solution of the reverse problem of ellipsometry,” Opt. Acta 30, 97–105 (1983). [CrossRef]
  7. W. T. Eadie, E. Dryard, F. E. James, M. Roos, B. Sadoulet, Statistical Methods in Experimental Physics (North-Holland, Amsterdam, 1971).

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