The multiple-angle-of-incidence ellipsometric study of polycrystalline Si deposited on oxidized single-crystal Si is presented. The complex index of refraction of polycrystalline Si, 3.936 + <i>i</i>0.040 at 632.8 nm, and the film thicknesses are obtained with high precision for the optimum thicknesses of a SiO<sub>2</sub> layer predicted numerically.
© 1985 Optical Society of America
Y. Gaillyová, E. Schmidt, and J. Humlíček, "Multiple-angle ellipsometry of Si-SiO2polycrystalline Si system," J. Opt. Soc. Am. A 2, 723-726 (1985)