The multiple-angle-of-incidence ellipsometric study of polycrystalline Si deposited on oxidized single-crystal Si is presented. The complex index of refraction of polycrystalline Si, 3.936 + i.040 at 632.8 nm, and the film thicknesses are obtained with high precision for the optimum thicknesses of a SiO2 layer predicted numerically.
© 1985 Optical Society of America
Original Manuscript: July 26, 1984
Manuscript Accepted: December 13, 1984
Published: May 1, 1985
Y. Gaillyová, E. Schmidt, and J. Humlíček, "Multiple-angle ellipsometry of Si–SiO2 polycrystalline Si system," J. Opt. Soc. Am. A 2, 723-726 (1985)