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Journal of the Optical Society of America A

Journal of the Optical Society of America A

| OPTICS, IMAGE SCIENCE, AND VISION

  • Vol. 2, Iss. 5 — May. 1, 1985
  • pp: 723–726

Multiple-angle ellipsometry of Si–SiO2 polycrystalline Si system

Y. Gaillyová, E. Schmidt, and J. Humlíček  »View Author Affiliations


JOSA A, Vol. 2, Issue 5, pp. 723-726 (1985)
http://dx.doi.org/10.1364/JOSAA.2.000723


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Abstract

The multiple-angle-of-incidence ellipsometric study of polycrystalline Si deposited on oxidized single-crystal Si is presented. The complex index of refraction of polycrystalline Si, 3.936 + i.040 at 632.8 nm, and the film thicknesses are obtained with high precision for the optimum thicknesses of a SiO2 layer predicted numerically.

© 1985 Optical Society of America

History
Original Manuscript: July 26, 1984
Manuscript Accepted: December 13, 1984
Published: May 1, 1985

Citation
Y. Gaillyová, E. Schmidt, and J. Humlíček, "Multiple-angle ellipsometry of Si–SiO2 polycrystalline Si system," J. Opt. Soc. Am. A 2, 723-726 (1985)
http://www.opticsinfobase.org/josaa/abstract.cfm?URI=josaa-2-5-723

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