Integrated color pixels in 0.18-μm complementary metal oxide semiconductor technology
JOSA A, Vol. 20, Issue 12, pp. 2293-2306 (2003)
http://dx.doi.org/10.1364/JOSAA.20.002293
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Abstract
Following the trend of increased integration in complementary metal oxide semiconductor (CMOS) image sensors, we have explored the potential of implementing light filters by using patterned metal layers placed on top of each pixel’s photodetector. To demonstrate wavelength selectivity, we designed and prototyped integrated color pixels in a standard 0.18-μm CMOS technology. Transmittance of several one-dimensional (1D) and two-dimensional (2D) patterned metal layers was measured under various illumination conditions and found to exhibit wavelength selectivity in the visible range. We performed (a) wave optics simulations to predict the spectral responsivity of an uncovered reference pixel and (b) numerical electromagnetic simulations with a 2D finite-difference time-domain method to predict transmittances through 1D patterned metal layers. We found good agreement in both cases. Finally, we used simulations to predict the transmittance for more elaborate designs.
© 2003 Optical Society of America
OCIS Codes
(040.6040) Detectors : Silicon
(050.2770) Diffraction and gratings : Gratings
(110.2970) Imaging systems : Image detection systems
(130.3120) Integrated optics : Integrated optics devices
(130.5990) Integrated optics : Semiconductors
(230.3990) Optical devices : Micro-optical devices
Citation
Peter B. Catrysse and Brian A. Wandell, "Integrated color pixels in 0.18-μm complementary metal oxide semiconductor technology," J. Opt. Soc. Am. A 20, 2293-2306 (2003)
http://www.opticsinfobase.org/josaa/abstract.cfm?URI=josaa-20-12-2293
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