OSA's Digital Library

Journal of the Optical Society of America A

Journal of the Optical Society of America A

| OPTICS, IMAGE SCIENCE, AND VISION

  • Vol. 20, Iss. 2 — Feb. 1, 2003
  • pp: 347–356

Generalized far-infrared magneto-optic ellipsometry for semiconductor layer structures: determination of free-carrier effective-mass, mobility, and concentration parameters in n-type GaAs

Mathias Schubert, Tino Hofmann, and Craig M. Herzinger  »View Author Affiliations


JOSA A, Vol. 20, Issue 2, pp. 347-356 (2003)
http://dx.doi.org/10.1364/JOSAA.20.000347


View Full Text Article

Enhanced HTML    Acrobat PDF (252 KB)





Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations

Abstract

We report for the first time on the application of generalized ellipsometry at far-infrared wavelengths (wave numbers from 150 cm-1 to 600 cm-1) for measurement of the anisotropic dielectric response of doped polar semiconductors in layered structures within an external magnetic field. Upon determination of normalized Mueller matrix elements and subsequent derivation of the normalized complex Jones reflection matrix r of an n-type doped GaAs substrate covered by a highly resistive GaAs layer, the spectral dependence of the room-temperature magneto-optic dielectric function tensor of n-type GaAs with free-electron concentration of 1.6×1018 cm-3 at the magnetic field strength of 2.3 T is obtained on a wavelength-by-wavelength basis. These data are in excellent agreement with values predicted by the Drude model. From the magneto-optic generalized ellipsometry measurements of the layered structure, the free-carrier concentration, their optical mobility, the effective-mass parameters, and the sign of the charge carriers can be determined independently, which will be demonstrated. We propose magneto-optic generalized ellipsometry as a novel approach for exploration of free-carrier parameters in complex organic or inorganic semiconducting material heterostructures, regardless of the anisotropic properties of the individual constituents.

© 2003 Optical Society of America

OCIS Codes
(260.1180) Physical optics : Crystal optics
(260.2130) Physical optics : Ellipsometry and polarimetry
(260.3090) Physical optics : Infrared, far

History
Original Manuscript: July 7, 2002
Revised Manuscript: September 13, 2002
Manuscript Accepted: September 13, 2002
Published: February 1, 2003

Citation
Mathias Schubert, Tino Hofmann, and Craig M. Herzinger, "Generalized far-infrared magneto-optic ellipsometry for semiconductor layer structures: determination of free-carrier effective-mass, mobility, and concentration parameters in n-type GaAs," J. Opt. Soc. Am. A 20, 347-356 (2003)
http://www.opticsinfobase.org/josaa/abstract.cfm?URI=josaa-20-2-347

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Log in to access OSA Member Subscription

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Log in to access OSA Member Subscription

You do not have subscription access to this journal. Figure files are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Log in to access OSA Member Subscription

You do not have subscription access to this journal. Article level metrics are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Log in to access OSA Member Subscription

« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited