Impurity and free-carrier effects on the far-infrared dispersion spectrum of silicon
JOSA A, Vol. 23, Issue 3, pp. 723-729 (2006)
http://dx.doi.org/10.1364/JOSAA.23.000723
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Abstract
We investigate a generalized Cauchy power-series expansion for the index of refraction of an n-type elemental semiconductor in the region of IR transparency. A plot of index versus photon energy squared should be very nearly linear if all absorptions lie above the transparent region. However, free carriers produce far-IR absorption, and the dispersive signature of this is a deviation from linearity in the mid- to far-IR. By retaining terms with negative exponents in the index expansion, we find a substantially improved fit to index measurements. Moreover, the free-carrier density may be determined from the coefficients in the regression fit. The method has been used to evaluate several extensive index measurements for doped silicon found in the literature.
© 2006 Optical Society of America
OCIS Codes
(000.3860) General : Mathematical methods in physics
(000.4430) General : Numerical approximation and analysis
(260.2030) Physical optics : Dispersion
(260.3090) Physical optics : Infrared, far
ToC Category:
Physical Optics
History
Original Manuscript: June 10, 2005
Manuscript Accepted: July 31, 2005
Citation
William Karstens, David C. Bobela, and D. Y. Smith, "Impurity and free-carrier effects on the far-infrared dispersion spectrum of silicon," J. Opt. Soc. Am. A 23, 723-729 (2006)
http://www.opticsinfobase.org/josaa/abstract.cfm?URI=josaa-23-3-723
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