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Journal of the Optical Society of America B

Journal of the Optical Society of America B


  • Vol. 17, Iss. 5 — May. 1, 2000
  • pp: 790–804

Nonlinear optical properties of GaSb and GaInAsSb and their application for phase conjugation in degenerate four-wave mixing

Monte D. Turner, Won B. Roh, and Kenneth L. Schepler  »View Author Affiliations

JOSA B, Vol. 17, Issue 5, pp. 790-804 (2000)

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The nonlinear optical properties of, and phase conjugation in, the bulk semiconductor GaSb were investigated at 2.1 µm by use of the Z-scan and the degenerate four-wave mixing techniques. Measurements were also carried out near the fundamental bandgap of the quaternary compound Ga0.87In0.13As0.11Sb0.89. Z-scan measurements as a function of sample temperature, in conjunction with theoretical modeling, identified the predominant sources of the medium nonlinearity to be nonequilibrium free carriers generated through two-photon absorption in GaSb, while it is saturation of real transitions near the fundamental band edge in Ga0.87In0.13As0.11Sb0.89 that was identified as the primary cause of this nonlinearity. Degenerate four-wave mixing phase-conjugate reflectivity of as much as 14% has been achieved in GaSb.

OCIS Codes
(140.3070) Lasers and laser optics : Infrared and far-infrared lasers
(160.4330) Materials : Nonlinear optical materials
(190.0190) Nonlinear optics : Nonlinear optics
(190.4180) Nonlinear optics : Multiphoton processes
(190.4380) Nonlinear optics : Nonlinear optics, four-wave mixing
(190.5040) Nonlinear optics : Phase conjugation
(190.5970) Nonlinear optics : Semiconductor nonlinear optics including MQW

Monte D. Turner, Won B. Roh, and Kenneth L. Schepler, "Nonlinear optical properties of GaSb and GaInAsSb and their application for phase conjugation in degenerate four-wave mixing," J. Opt. Soc. Am. B 17, 790-804 (2000)

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