Characterization of AlGaAs/AlAs waveguides for optical parametric interactions
JOSA B, Vol. 19, Issue 4, pp. 902-910 (2002)
http://dx.doi.org/10.1364/JOSAB.19.000902
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Abstract
We report on the use of several complementary techniques for the optical characterization of semiconductor waveguides for parametric generation. Grating-assisted distributed coupling, x-ray reflectometry, and surface-emitting second-harmonic generation allowed us to evaluate the effective indices of the guided modes, the thickness of each constituent layer, and the modal birefringences of a multilayer AlGaAs/AlAs waveguide, respectively. With the experimental accuracy afforded by these techniques we could precisely infer the bulk refractive indices of various films to comply with the strict requirements for phase-matched guided-wave devices.
© 2002 Optical Society of America
OCIS Codes
(130.0130) Integrated optics : Integrated optics
(130.2790) Integrated optics : Guided waves
(130.5990) Integrated optics : Semiconductors
Citation
Giuseppe Leo, Gaetano Assanto, Olivier Durand, and Vincent Berger, "Characterization of AlGaAs/AlAs waveguides for optical parametric interactions," J. Opt. Soc. Am. B 19, 902-910 (2002)
http://www.opticsinfobase.org/josab/abstract.cfm?URI=josab-19-4-902
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