Measuring the above-threshold group-velocity dispersion and gain curvature of a semiconductor laser by pulse-propagation techniques
JOSA B, Vol. 21, Issue 1, pp. 29-35 (2004)
http://dx.doi.org/10.1364/JOSAB.21.000029
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Abstract
The dispersive broadening of a single optical pulse traveling within a Fabry–Pérot semiconductor laser was measured for propagation over 58 round trips of the cavity, a distance of 352 mm. The interference between two copropagating pulses with variable relative phase (stabilized to within 2π×0.02 rad) was used to relate the group-velocity dispersion to the gain curvature. With both single- and double-pulse propagation measurements, the complex group-velocity dispersion (including gain curvature) was found to be 8.7+5.9i ps2/m at twice the laser-threshold bias current. When the laser bias was increased from 1.4 to 2 times the laser threshold, the gain curvature decreased by 2.8%, and the group-velocity dispersion showed less than 0.1% variation.
© 2004 Optical Society of America
OCIS Codes
(130.2790) Integrated optics : Guided waves
(140.5960) Lasers and laser optics : Semiconductor lasers
(320.7150) Ultrafast optics : Ultrafast spectroscopy
Citation
R. Gordon, A. P. Heberle, and J. R. A. Cleaver, "Measuring the above-threshold group-velocity dispersion and gain curvature of a semiconductor laser by pulse-propagation techniques," J. Opt. Soc. Am. B 21, 29-35 (2004)
http://www.opticsinfobase.org/josab/abstract.cfm?URI=josab-21-1-29
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