A detailed numerical study of the third-order nonlinear optical susceptibilities (χ(3)) of semiconductor quantum wells is presented. The dependence of χ(3) on material parameters (electron-hole mass ratio and exciton linewidths), on the light polarization configuration (co- and countercircularly polarized) and on the spectral configuration is discussed. The goal of this study is to map out the nonlinear phase shift per quantum well and a related figure of merit caused by quasi-resonant excitonic and biexcitonic nonlinearities induced by picosecond light pulses. The study is based on the dynamics-controlled truncation formalism and evaluated under the assumption that only 1s-heavy-hole excitons contribute to the nonlinearities. It includes all correlation effects (exciton–exciton scattering in the singlet and triplet channels and coherent biexciton formation in the singlet channel) that contribute within the coherent excitonic χ(3) regime.
© 2004 Optical Society of America
(190.4720) Nonlinear optics : Optical nonlinearities of condensed matter
(190.7110) Nonlinear optics : Ultrafast nonlinear optics
(230.5590) Optical devices : Quantum-well, -wire and -dot devices
(320.7130) Ultrafast optics : Ultrafast processes in condensed matter, including semiconductors
Ryu Takayama, Nai-Hang Kwong, Ilya Rumyantsev, Makoto Kuwata-Gonokami, and R. Binder, "Material and light-pulse parameter dependence of the nonlinear optical susceptibilities in the coherent χ(3) regime in semiconductor quantum wells," J. Opt. Soc. Am. B 21, 2164-2174 (2004)