We describe the characterize a compact ring Ti:sapphire laser injection locked to an extended-cavity semiconductor source. The laser system has a good spectral purity and allows for fast scans, keeping the injection-locking condition. We analyze experimentally the amplitude noise properties of the free-running and injected laser and show good agreement with a quantum-mechanical model. In spite of the sub-shot-noise properties of the semiconductor source, the injected laser exhibits strong excess amplitude fluctuations. We show that this effect is due to the conversion of the strong phase noise of the semiconductor laser into amplitude noise of the injected Ti:sapphire laser.
© 2006 Optical Society of America
Lasers and Laser Optics
Original Manuscript: October 14, 2005
Revised Manuscript: February 10, 2006
Manuscript Accepted: February 16, 2006
Jacopo Belfi, Iacopo Galli, Giovanni Giusfredi, and Francesco Marin, "Intensity noise of an injection-locked Ti:sapphire laser: analysis of the phase-noise-to-amplitude-noise conversion," J. Opt. Soc. Am. B 23, 1276-1286 (2006)