We give a detailed analysis of the influence of near-resonant self-phase modulation on subpicosecond pulse propagation through bulk GaAs at low temperature. We cover the dependence of the pulse characteristics on the propagation length, the input pulse intensity, the focusing into the sample, and the detuning from the band edge. Numerical simulations based on the nonlinear Schrödinger equation are compared with the experimental observations. Phase-resolved measurements characterize the evolution of the pulse phase during propagation. All experiments are based on a fast-scanning technique that ensures high signal-to-noise ratios.
© 2006 Optical Society of America
Original Manuscript: January 6, 2006
Manuscript Accepted: February 17, 2006
Tilman Höner zu Siederdissen, Nils C. Nielsen, Jürgen Kuhl, and Harald Giessen, "Influence of near-resonant self-phase modulation on pulse propagation in semiconductors," J. Opt. Soc. Am. B 23, 1360-1370 (2006)