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Journal of the Optical Society of America B

Journal of the Optical Society of America B


  • Editor: Henry M. Van Driel
  • Vol. 24, Iss. 11 — Nov. 1, 2007
  • pp: 2853–2859

Numerical analysis of silicon-on-insulator ridge nanowires by using a full-vectorial finite-difference method mode solver

Daoxin Dai and Zhen Sheng  »View Author Affiliations

JOSA B, Vol. 24, Issue 11, pp. 2853-2859 (2007)

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The characteristics of silicon-on-insulator (SOI) ridge waveguides are analyzed by using a cylindrical full-vectorial finite-difference method mode solver with a perfectly-matched layer treatment. First, the single-mode condition for an SOI ridge nanowire with different Si core thicknesses is obtained. The obtained single-mode condition is different from that for the conventional micrometrical SOI ridge waveguides with a large cross section. By adjusting the cross section (the core width and the etching depth), one can have a nonbirefringent SOI ridge nanowire. The analysis on the bending loss of SOI ridge nanowires shows that one can have a relatively small bending radius even with a shallow etching (i.e., a small ratio γ between the etching depth and the total thickness). For example, even when one chooses a small ratio γ = 0.4 , one still has a low bending loss with a small bending radius of 15 μ m for an SOI nanowire with a thin core h co = 250 nm , which is very different from a conventional large SOI ridge waveguide.

© 2007 Optical Society of America

OCIS Codes
(060.4230) Fiber optics and optical communications : Multiplexing
(130.3120) Integrated optics : Integrated optics devices

ToC Category:
Optical Devices

Original Manuscript: July 16, 2007
Manuscript Accepted: September 2, 2007
Published: October 29, 2007

Daoxin Dai and Zhen Sheng, "Numerical analysis of silicon-on-insulator ridge nanowires by using a full-vectorial finite-difference method mode solver," J. Opt. Soc. Am. B 24, 2853-2859 (2007)

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