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Journal of the Optical Society of America B

Journal of the Optical Society of America B


  • Editor: Henry M. Van Driel
  • Vol. 25, Iss. 5 — May. 1, 2008
  • pp: 801–809

Spectral properties and efficient laser operation near 2.0 μ m of Tm 3 + : Ba Gd 2 ( Mo O 4 ) 4 crystal

Haomiao Zhu, Yujin Chen, Yanfu Lin, Xinghong Gong, Zundu Luo, and Yidong Huang  »View Author Affiliations

JOSA B, Vol. 25, Issue 5, pp. 801-809 (2008)

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A 6.4 at. % Tm 3 + -doped Ba Gd 2 ( Mo O 4 ) 4 cleavage crystal was grown by the Czochralski method. Detailed spectral properties of this crystal were investigated, including the polarized absorption and emission spectra and the fluorescence decay. The maximum absorption cross section of the pump band is 3.5 cm × 10 20 cm at 798 nm with a bandwidth of 8 nm , which means that this crystal is suitable for laser diode pumping. The Judd–Ofelt theory was used to calculate the radiative transition probabilities between multiplets. Pumped by a Ti:sapphire laser, the 2.0 μ m quasi-cw laser operation was performed using a cleaved 1.1 mm thick wafer of this crystal in a hemispherical cavity. The achieved highest slope efficiency was 51% with a 6.7% output coupler and the corresponding threshold was 31 mW . The results show that a Tm 3 + : Ba Gd 2 ( Mo O 4 ) 4 crystal is a promising candidate for 2.0 μ m microchip lasers.

© 2008 Optical Society of America

OCIS Codes
(140.3380) Lasers and laser optics : Laser materials
(140.3580) Lasers and laser optics : Lasers, solid-state
(160.5690) Materials : Rare-earth-doped materials

ToC Category:
Lasers and Laser Optics

Original Manuscript: January 18, 2008
Revised Manuscript: February 27, 2008
Manuscript Accepted: February 27, 2008
Published: April 28, 2008

Haomiao Zhu, Yujin Chen, Yanfu Lin, Xinghong Gong, Zundu Luo, and Yidong Huang, "Spectral properties and efficient laser operation near 2.0 μm of Tm3+:BaGd2(MoO4)4 crystal," J. Opt. Soc. Am. B 25, 801-809 (2008)

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