Study of gain in photonic bandgap active InP waveguides
JOSA B, Vol. 26, Issue 12, pp. 2414-2422 (2009)
http://dx.doi.org/10.1364/JOSAB.26.002414
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Abstract
The parametric analysis of an active InP-based buried waveguide is proposed to optimize the amplification of the electric field at a given operation wavelength. The waveguide exploits a one-dimensional photonic crystal (PhC), the periodicity of which is perturbed by an active defective region. The analysis of the gain spectrum, as a function of the geometrical and electrical parameters, has been performed using proprietary codes, based on the bidirectional beam propagation method with method of lines, introducing rate equations to take into account the interaction of the matter with the photons. It is shown that the variations in the number of layers of the one-dimensional PhC, of the injection current, and of the length of the active defect strongly influence the behavior of the gain. A simple example of an active photonic switch is proposed as an application of the outlined design criteria.
© 2009 Optical Society of America
OCIS Codes
(130.3120) Integrated optics : Integrated optics devices
(130.4815) Integrated optics : Optical switching devices
(230.5298) Optical devices : Photonic crystals
ToC Category:
Integrated Optics
History
Original Manuscript: August 4, 2009
Revised Manuscript: October 15, 2009
Manuscript Accepted: October 19, 2009
Published: November 23, 2009
Citation
Giovanna Calò, Luciano Mescia, Vincenzo Petruzzelli, and Francesco Prudenzano, "Study of gain in photonic bandgap active InP waveguides," J. Opt. Soc. Am. B 26, 2414-2422 (2009)
http://www.opticsinfobase.org/josab/abstract.cfm?URI=josab-26-12-2414
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