Analysis on steady-state characteristics of widely tunable SG-DBR laser with residual facet reflectivity model

Xiaoying He; Yonglin Yu; Dexiu Huang; Shan Jiang; Wen Liu; D. N. Wang

doi:10.1364/JOSAB.26.001511

Journal of the Optical Society of America B
Vol. 26,
Issue 8,
pp. 1511-1518
(2009)
•https://doi.org/10.1364/JOSAB.26.001511

Analysis on steady-state characteristics of widely tunable SG-DBR laser with residual facet reflectivity model

Xiaoying He, Yonglin Yu, Dexiu Huang, Shan Jiang, Wen Liu, and D. N. Wang

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Xiaoying He, Yonglin Yu, Dexiu Huang, Shan Jiang, Wen Liu, and D. N. Wang, "Analysis on steady-state characteristics of widely tunable SG-DBR laser with residual facet reflectivity model," J. Opt. Soc. Am. B 26, 1511-1518 (2009)

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Abstract

An efficient way to model the distributed Bragg reflector type of semiconductor devices with residual facet reflectivity is presented. Particularly, to improve the performance of such laser from two different ways of tuning—the differential or simultaneous tuning of two reflectors—the impacts of residual facet reflectivity on the sampled grating, and the static characteristics of such laser, including tuning behavior, output power, and side mode suppression ratio, are discussed. It revealed that the position of the facet relative to the gratings as well as their reflectivities are important parameters and should be carefully designed and fabricated to ensure good performance for such devices.

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Parameter	Symbol	Value
Active section:
Thickness of active layer	d	$0.15 μ m$
Width of active layer	w	$1.2 μ m$
Length of active section	$l_{3}$	$500 μ m$
Confinement factor	Γ	0.32
Mode refractive index	$n_{3}$	3.245
Nonradiative recombination coefficient	A	$1.5 \times 10^{8} s^{- 1}$
Bimolecular recombination coefficient	B	$4 \times 10^{- 16} m^{3} s^{- 1}$
Auger recombination coefficient	C	$5 \times 10^{- 41} m^{6} s^{- 1}$
Central wavelength	$λ_{p}$	$1.550 μ m$
Internal absorption loss	α	$2100 m^{- 1}$
Spontaneous emission factor	γ	$10^{- 4}$
Spontaneous electron lifetime	$τ_{sp}$	3 ns
Differential gain	a	$2.5 \times 10^{- 16} {cm}^{- 2}$
Gain constant	b	$0.23 {nm}^{- 2}$

Passive phase section:
Thickness of waveguide layer	d	$0.38 μ m$
Width of waveguide layer	W	$1.2 μ m$
Length of waveguide section	$l_{4}$	$50 μ m$
Confinement factor	Γ	0.4
Mode refractive index	$n_{4}$	3.21
Nonradiative recombination coefficient	A	$1.68 \times 10^{8} s^{- 1}$
Bimolecular recombination coefficient	B	$2.8 \times 10^{- 17} m^{3} s^{- 1}$
Auger recombination coefficient	C	$5.24 \times 10^{- 42} m^{6} s^{- 1}$
Facet field reflectivity	$r_{2}$	0.4–0.000 01
Internal absorption loss without injection current	α	$1200 m^{- 1}$
Injection efficiency	$η_{in}$	0.7

SG:
Thickness of waveguide layer	d	$0.38 μ m$
Width of waveguide layer	w	$1.2 μ m$
Nonradiative recombination coefficient	A	$2.5 \times 10^{8} s^{- 1}$
Bimolecular recombination coefficient	B	$1 \times 10^{- 17} m^{3} s^{- 1}$
Auger recombination coefficient	C	$4 \times 10^{- 41} m^{6} s^{- 1}$
Confinement factor	Γ	0.35
Effective refractive index	$n_{SG}$	3.4
Internal absorption loss without injection current	α	$1200 m^{- 1}$
Variation in refractive index	$δ n_{eff}$	$6 \times 10^{- 3}$
Injection efficiency	$η_{in}$	0.85
Length of the front SG section	$l_{1}$	$360 μ m$
Length of the rear SG section	$l_{2}$	$600 μ m$

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Journal of the Optical Society of America B