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Journal of the Optical Society of America B

Journal of the Optical Society of America B

| OPTICAL PHYSICS

  • Editor: Henry Van Driel
  • Vol. 26, Iss. 9 — Sep. 1, 2009
  • pp: A1–A5

Noncontact evaluation of nondoped InP wafers by terahertz time-domain spectroscopy

Caihong Zhang, Biaobing Jin, Jian Chen, Peiheng Wu, and Masayoshi Tonouchi  »View Author Affiliations


JOSA B, Vol. 26, Issue 9, pp. A1-A5 (2009)
http://dx.doi.org/10.1364/JOSAB.26.0000A1


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Abstract

Terahertz (THz) time-domain spectroscopy is used as a noncontact method to evaluate a nondoped indium phosphide (InP) wafer for the temperature and frequency ranges of 4.2 300 K and 0.2 4 THz , respectively. The strongly temperature- and frequency-dependent optical constants of the complex refractive index and complex conductivity were observed in the THz region, which were fitted and analyzed with a simple Drude model. The temperature dependence of the carrier density and scattering time are also presented. The shallow donors of impurities are discussed with the obtained results.

© 2009 Optical Society of America

OCIS Codes
(160.4760) Materials : Optical properties
(160.6000) Materials : Semiconductor materials
(300.6495) Spectroscopy : Spectroscopy, teraherz

History
Original Manuscript: February 2, 2009
Revised Manuscript: March 19, 2009
Manuscript Accepted: March 20, 2009
Published: April 21, 2009

Citation
Caihong Zhang, Biaobing Jin, Jian Chen, Peiheng Wu, and Masayoshi Tonouchi, "Noncontact evaluation of nondoped InP wafers by terahertz time-domain spectroscopy," J. Opt. Soc. Am. B 26, A1-A5 (2009)
http://www.opticsinfobase.org/josab/abstract.cfm?URI=josab-26-9-A1


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References

  1. D. E. Aspnes and A. A. Studna, “Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV,” Phys. Rev. B 27, 985-1009 (1983). [CrossRef]
  2. T.-A. Liu, M. Tani, M. Nakajima, M. Hangyo, K. Sakai, S.-i. Nakashima, and C. L. Pan, “Ultrabroadband terahertz field detection by proton-bombarded InP photoconductive antennas,” Opt. Express 12, 2954-2959 (2004). [CrossRef] [PubMed]
  3. J. Lloyd-Hughes, E. Castro-Camus, and M. B. Johnston, “Simulation and optimisation of terahertz emission from InGaAs and InP photoconductive switches,” Solid State Commun. 136, 595-600 (2005). [CrossRef]
  4. Ioffe Physico-Technical Institute, “New semiconductor materials. Characteristics and properties,” http://www.ioffe.rssi.ru/SVA/NSM.
  5. S. Adachi, Physical Properties of III-V Semiconductor Compounds: InP, InAs, GaAs, GaP, InGaAs, and InGaAsP (Wiley-Interscience, 1992). [CrossRef] [PubMed]
  6. C. S. Ma, P. W. Chan, V. C. Lo, C. W. Ong, and S. P. Wong, “Deep-level photoluminescence studies of undoped and tin-doped (LEC) InP,” J. Mater. Sci.: Mater. Electron. 5, 215-220 (1994). [CrossRef]
  7. H. W. Dong, Y. W. Zhao, H. P. Lu, J. H. Jiao, J. Q. Zhao, and L. Y. Lin, “Photoluminescence assessment of undoped semi-insulating InP wafers obtained by annealing in iron phosphide vapour,” Semicond. Sci. Technol. 17, 570-574 (2002). [CrossRef]
  8. S. Fung, Y. W. Zhao, C. D. Beling, X. L. Xu, M. Gong, N. F. Sun, T. N. Sun, X. D. Chen, R. G. Zhang, S. L. Liu, G. Y. Yang, J. J. Qian, M. F. Sun, and X. L. Liu, “Compensation ratio-dependent concentration of a VInH4 complex in n-type liquid encapsulated Czochralski InP,” Appl. Phys. Lett. 73, 1275-1277 (1998). [CrossRef]
  9. H. Yoshinaga, T. Matsumori, and F. Uehara, “Impurity effect on recombination process in InP,” Jpn. J. Appl. Phys., Part 1 35, 2930-2933 (1996). [CrossRef]
  10. K. Zdansky, L. Pekarek, and P. Hlidek, “Pure and intentionally doped indium phosphide wafers treated by long time annealing at high temperatures,” Semicond. Sci. Technol. 18, 938-944 (2003). [CrossRef]
  11. B. Ferguson and X. C. Zhang, “Materials for terahertz science and technology,” Nature Mater. 1, 26-33 (2002). [CrossRef]
  12. M. Tonouchi, “Cutting-edge terahertz technology,” Nat. Photonics 1, 97-105 (2007). [CrossRef]
  13. L. Duvillaret, F. Garet, and J.-L. Coutaz, “Highly precise determination of optical constants and sample thickness in terahertz time-domain spectroscopy,” Appl. Opt. 38, 409-415 (1999). [CrossRef]
  14. T. D. Dorney, R. G. Baraiuk, and D. M. Mittleman, “Material parameter estimation with terahertz time domain spectroscopy,” J. Opt. Soc. Am. A 18, 1562-1571 (2001). [CrossRef]
  15. I. Pupeza, R. Wilk, and M. Koch, “Highly accurate optical material parameter determination with THz time-domain spectroscopy,” Opt. Express 15, 4335-4350 (2007). [CrossRef] [PubMed]
  16. D. Grischkowsky, S. Keiding, M. v. Exter, and C. Fattinger, “Far-infrared time-domain spectroscopy with terahertz beams of dielectrics and semiconductors,” J. Opt. Soc. Am. B 7, 2006-2015 (1990). [CrossRef]
  17. S. Nashima, O. Morikawa, K. Takata, and M. Hangyo, “Temperature dependence of optical and electronic properties of moderately doped silicon at terahertz frequencies,” J. Appl. Phys. 90, 837-842 (2001). [CrossRef]
  18. T.-I. Jeon and D. Grischkowsky, “Nature of conduction in doped silicon,” Phys. Rev. Lett. 78, 1106--1109 (1997). [CrossRef]
  19. R. T. Kinasewitz and B. Senitzky, “Investigation of the complex permittivity of n-type silicon at millimeter wavelengths,” J. Appl. Phys. 54, 3394-3398 (1983). [CrossRef]
  20. N. W. Ashcroft and N. D. Mermin, Solid State Physics (Holt, Rinehart, and Winston, 1976).
  21. T. Ohba and S. Ikawa, “Far-infrared absorption of silicon crystals,” J. Appl. Phys. 64, 4141-4143 (1988). [CrossRef]
  22. E. Barta, “Determination of effective mass values by a Kramers-Kronig analysis for variously doped silicon crystals,” Infrared Phys. 17, 111-119 (1977). [CrossRef]
  23. M. G. Astles, F. G. H. Smith, and E. W. Williams, “Indium phosphide,” J. Electrochem. Soc. 120, 1750-1757 (1973). [CrossRef]
  24. A. Yamamoto, S. Shinoyama, and C. Uemura, “Silicon contamination of InP synthesized under high phosphorus pressure,” J. Electrochem. Soc. 128, 585-589 (1981). [CrossRef]
  25. R. Coquille, Y. Toudic, M. Gauneau, G. Grandpierre, and J. C. Paris, “Synthesis, crystal growth and characterization of InP,” J. Cryst. Growth 64, 23-31 (1983). [CrossRef]

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