Abstract
Pumping n-type GaAs and InSb with ultrafast THz pulses having intensities higher than shows strong free-carrier absorption saturation at temperatures of and , respectively. If the energy imparted to the carriers exceeds the bandgap, impact ionization processes can occur. The dynamics of carrier cooling in GaAs and impact ionization in InSb were monitored using THz-pump/THz probe spectroscopy, which provides both sub-bandgap excitation and probing, eliminating any direct optical electron-hole generation that complicates the evaluation of results in optical pump/THz probe experiments.
© 2009 Optical Society of America
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