Abstract

Operation regimes of a two section monolithic quantum dot (QD) mode-locked laser are studied experimentally with InGaAs lasers and theoretically, using a model that takes into account carrier exchange between QD ground state and two-dimensional reservoir of a QD-in-a-well structure. It is shown analytically and numerically that, when the absorber section is long enough, the laser exhibits bistability between laser off state and different mode-locking regimes. The Q-switching instability leading to slow modulation of the mode-locked pulse peak intensity is completely eliminated in this case. When, on the contrary, the absorber length is rather short, in addition to usual Q-switched mode-locking, pure Q-switching regimes are predicted theoretically and observed experimentally.

© 2010 Optical Society of America

Intrinsic gain switching in optically injected quantum dot laser lasing simultaneously from the ground and excited state

Lukasz Olejniczak, Krassimir Panajotov, Sebastian Wieczorek, Hugo Thienpont, and Marc Sciamanna
J. Opt. Soc. Am. B 27(11) 2416-2423 (2010)

Q-switching instability in a mode-locked semiconductor laser

Dmitrii Rachinskii, Andrei Vladimirov, Uwe Bandelow, Bernd Hüttl, and Ronald Kaiser
J. Opt. Soc. Am. B 23(4) 663-670 (2006)

External optical feedback-induced wavelength selection and Q-switching elimination in an InAs/InGaAs passively mode-locked quantum dot laser

Charis Mesaritakis, Christos Simos, Hercules Simos, Alexandros Kapsalis, Igor Krestnikov, and Dimitris Syvridis
J. Opt. Soc. Am. B 29(5) 1071-1077 (2012)

Experimental investigation of different regimes of mode-locking in a high repetition rate passively mode-locked semiconductor quantum-dot laser

Fabien Kéfélian, Shane O’Donoghue, Maria Teresa Todaro, John McInerney, and Guillaume Huyet
Opt. Express 17(8) 6258-6267 (2009)

Reconfigurable quantum dot monolithic multi-section passive mode-locked lasers

Y.-C. Xin, Y. Li, Vassilios Kovanis, A. L. Gray, L. Zhang, and L. F. Lester
Opt. Express 15(12) 7623-7633 (2007)