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Optical studies of ballistic currents in semiconductors [Invited] |
JOSA B, Vol. 29, Issue 2, pp. A43-A54 (2012)
http://dx.doi.org/10.1364/JOSAB.29.000A43
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Abstract
We present a summary of recent studies of ballistic currents using nonlinear optical techniques. Quantum interference between one- and two-photon absorption pathways is used to inject and control ballistic currents in GaAs samples. With this, a pure charge current, pure spin current, or spin-polarized charge current can be injected by changing the polarization configuration of the two pump pulses. Such currents are temporally and spatially resolved using high-resolution pump–probe techniques, including a derivative-detection scheme, which allows detection of the motion of carriers as small as 0.1 nm. Observation of the intrinsic inverse spin Hall effect in the ballistic regime, a study of time-resolved ballistic spin-polarized charge currents, and a study of the efficiency of spin current injection by quantum interference were all achieved using these techniques. Additionally, we discuss demonstrations of second-order nonlinear optical effects induced by charge and spin currents, which allow for the nondestructive, noninvasive, and real-time imaging of currents.
© 2012 Optical Society of America
OCIS Codes
(190.5970) Nonlinear optics : Semiconductor nonlinear optics including MQW
(320.7110) Ultrafast optics : Ultrafast nonlinear optics
(320.7130) Ultrafast optics : Ultrafast processes in condensed matter, including semiconductors
History
Original Manuscript: October 17, 2011
Manuscript Accepted: November 23, 2011
Published: January 25, 2012
Virtual Issues
(2012) Advances in Optics and Photonics
Citation
Brian A. Ruzicka and Hui Zhao, "Optical studies of ballistic currents in semiconductors [Invited]," J. Opt. Soc. Am. B 29, A43-A54 (2012)
http://www.opticsinfobase.org/josab/abstract.cfm?URI=josab-29-2-A43
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