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Journal of the Optical Society of America B

Journal of the Optical Society of America B

| OPTICAL PHYSICS

  • Editor: Henry van Driel
  • Vol. 29, Iss. 2 — Feb. 1, 2012
  • pp: A6–A16

Electromagnetically induced transparency from electron spin coherences in semiconductor quantum wells [Invited]

Hailin Wang and Shannon O’Leary  »View Author Affiliations


JOSA B, Vol. 29, Issue 2, pp. A6-A16 (2012)
http://dx.doi.org/10.1364/JOSAB.29.0000A6


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Abstract

In this paper, we review our recent experimental studies on electromagnetically induced transparency (EIT) from electron spin coherences in semiconductor quantum wells. Coherent Raman resonances, manifestations of EIT from electron spin coherences at relatively low pump intensities, were demonstrated in both V-type and Λ-type three-level systems via heavy-hole exciton and trion transitions in undoped and doped quantum wells, respectively. Coherent Raman resonances from electron spin coherences via light-hole transitions were also demonstrated in a waveguide geometry that enables a long optical interaction length as well as a large absorption coefficient. Experimental approaches that can avoid or reduce detrimental many-body effects in quantum wells are suggested for the realization of nearly ideal EIT processes.

© 2012 Optical Society of America

OCIS Codes
(190.5970) Nonlinear optics : Semiconductor nonlinear optics including MQW
(300.6470) Spectroscopy : Spectroscopy, semiconductors

History
Original Manuscript: October 4, 2011
Manuscript Accepted: November 29, 2011
Published: January 25, 2012

Virtual Issues
(2012) Advances in Optics and Photonics

Citation
Hailin Wang and Shannon O’Leary, "Electromagnetically induced transparency from electron spin coherences in semiconductor quantum wells [Invited]," J. Opt. Soc. Am. B 29, A6-A16 (2012)
http://www.opticsinfobase.org/josab/abstract.cfm?URI=josab-29-2-A6


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