The time responses of the photorefractive effect in semi-insulating InP doped with Fe and CdTe doped with In are measured. Using microjoule infrared pulses, gratings can be written and erased in less than a microsecond and probably much faster. Through use of a pulsed applied field, good diffraction efficiencies are achieved along with fast dark relaxation times of the order of 10−4 sec. These factors indicate that semiconductors have promise for photorefractive image-processing applications.
© 1986 Optical Society of America
J. Strait and A. M. Glass, "Time-resolved photorefractive four-wave mixing in semiconductor materials," J. Opt. Soc. Am. B 3, 342-344 (1986)