Time-resolved photorefractive four-wave mixing in semiconductor materials
JOSA B, Vol. 3, Issue 2, pp. 342-344 (1986)
http://dx.doi.org/10.1364/JOSAB.3.000342
Acrobat PDF (399 KB)
Abstract
The time responses of the photorefractive effect in semi-insulating InP doped with Fe and CdTe doped with In are measured. Using microjoule infrared pulses, gratings can be written and erased in less than a microsecond and probably much faster. Through use of a pulsed applied field, good diffraction efficiencies are achieved along with fast dark relaxation times of the order of 10−4 sec. These factors indicate that semiconductors have promise for photorefractive image-processing applications.
© 1986 Optical Society of America
Citation
J. Strait and A. M. Glass, "Time-resolved photorefractive four-wave mixing in semiconductor materials," J. Opt. Soc. Am. B 3, 342-344 (1986)
http://www.opticsinfobase.org/josab/abstract.cfm?URI=josab-3-2-342
You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Log in to access OSA Member Subscription
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Log in to access OSA Member Subscription
You do not have subscription access to this journal. Article level metrics are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Log in to access OSA Member Subscription
« Previous Article | Next Article »
OSA is a member of 